features high isolation voltage bv: 2.5 k v r.m.s. min high collector to emitter voltage v ceo : 300 v min: ps2732-1,-2,-4 v ceo : 350 v min: ps2733-1,-2,-4 sop (small out-line package) ultra high current transfer ratio ctr: 4000% typ taping product number (only -1 type) ps2732-1-e3, f3 ps2733-1-e3, f3 description the ps2732 and ps2733 are optically coupled isolators containing a gaas light emitting diode and an npn silicon darlington-connected phototransistor. each is mounted in a plastic sop (small out-line package) for high density appli- cations. part number ps2732-1, -2, -4, ps2733-1, -2, -4 symbols parameters units min typ max v f forward voltage, i f = 10 ma v 1.15 1.4 i r reverse current, v r = 5 v a5 c t junction capacitance, v = 0, f = 1.0 mhz pf 30 i ceo collector to emitter dark current, v ce = 300 v, i f = 0 na 400 ctr current transfer ratio, i f = 1 ma, v ce = 2 v % 1500 4000 v ce(sat) collector saturation voltage, i f = 1 ma, i c = 2 ma v 1.0 r 1-2 isolation resistance, v in-out = 1.0 k v dc ? 10 11 c 1-2 isolation capacitance, v = 0, f = 1.0 mh z pf 0.4 t r rise time 1 , v cc = 5 v, i c = 10 ma, r l = 100 ? s 100 t f fall time 1 , v cc = 5 v, i c = 10 ma, r l = 100 ? s 100 note: 1. test circuit for switching time electrical characteristics (t a = 25 c) diode transistor coupled ps2732-1, -2, -4 ps2733-1, -2, -4 high isolation voltage high collector to emitter voltage sop photocoupler ps2732-1 ps2733-1 ps2732-2 ps2733-2 ps2732-4 PS2733-4 applications interface circuit for various instrumentations and control equipment. replacement for relay in pulse-dial circuit high ctr circuit applications pulse input pw = 100 s duty cycle = 1/10 () i f v out r l = 100 ? 50 ? 1 2 5 4 v cc 43 1 2 8765 1 234 16 15 14 13 134 12 11 10 9 2578 6 california eastern laboratories
symbols parameters units ratings ps2732-1 ps2732-2, -4 ps2733-1 ps2733-2, -4 diode v r reverse voltage v 6 6 i f forward current ma 50 50 p d power dissipation mw/ch 80 80 i f (peak) peak forward current a 1 1 (pw = 100 s, duty cycle 1%) transistor v ceo collector to emitter voltage v 300/350 300/350 (i c = ima, i b = 0) v ebo emitter to base breakdown volt v 6 6 (i e = 100 a, i b = 0) i c collector current ma/ch 150 150 p c power dissipation mw/ch 150 120 coupled bv isolation voltage 2 v r.m.s. 2500 t op operating temperature c -55 to +100 t stg storage temperature c -55 to +150 absolute maximum ratings 1 (t a = 25 c) notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. ac voltage for 1 minute at t a = 25 c, rh = 60 % between input and ouput. ps2732-1,-2,-4, ps2733-1,-2,-4 typical performance curves (t a = 25 c) diode power dissipation vs. ambient temperature diode power dissipation, p d (mw) ambient temperature, t a ( c) transistor power dissipation vs. ambient temperature transistor power dissipation, p c (mw) ambient temperature, t a ( c) forward current vs. forward voltage forward current, i f (ma) forward voltage, v f (v) collector current, i c (ma) collector to emitter voltage, v ce (v) collector current vs. collector to emitter voltage 100 75 50 25 0 25 50 75 100 200 150 100 50 0 25 50 75 100 ps2732-1 ps2733-1 1.5 mw/?c ps2732-2,-4 ps2733-2,-4 1.2 mw/?c 100 10 1 0.1 0.01 0.8 1 1.2 1.4 1.6 t a = 100 ? c 75 ? c 50 ? c 25 ? c 0 ? c -25 ? c -55 ? c 0.6 5 ma 4 ma 4.5 ma 3.5 ma 3 ma 2.5 ma 2 ma 1.5 ma 1 ma i f = 0.5 ma 160 140 120 100 80 60 40 20 012345
collector to emitter dark current vs. ambient temperature collector to emitter dark current, i ceo (a) ambient temperature, t a ( c) collector current vs. collector saturation voltage collector current, i c (ma) collector saturation voltage, v ce ( sat ) (v) ? ctr, normalized output current normalized output current vs. ambient temperature current transfer ratio, ctr (%) forward current, i f (ma) load resistance, r l ( ? ) frequency response voltage gain, a v (db) frequency, f (khz) typical performance curves (t a = 25 c) ambient temperature, t a ( c) current transfer ratio (ctr) vs. forward current switching time vs. load resistance switching time,t ( s) ps2732-1,-2,-4, ps2733-1,-2,-4 10 -50 -25 02550 v ce = 300 v 1 100 n 10 n 1 n 100 p 75 100 i f = 5 ma i f = 2 ma i f = 1 ma i f = 0.5 ma 100 10 1000 1 0.1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 normalized to 1.0 at t a = 25 ? c i f = 1 ma, v ce = 2 v 1.2 -50 -25 02550 1.0 0.8 0.6 0.4 0.2 75 100 0 v ce = 2 v 4000 3000 2000 1000 0.1 0.5 1 5000 0 510 20 sample a sample b 100 50 10 5 20 50 100 300 1 500 1 k 2 k v cc = 10 v, i c = 10 ma pulse width = 5 ms duty cycle = 1/2 t r t d t f t s v ce = 4 v, i c = 10 ma v in = 0.1 v p-p 1 k ? v in 1 f 47 ? v out r l 1 k ? 100 ? 10 ? -5 -10 -15 -20 -25 0.01 0.1 1 0 -30 10 100
typical performance curves (t a = 25 c) outline dimensions (units in mm) ps2732-1, ps2733-1 pin connection (top view) ps2732-2, ps2733-2 pin connection (top view) ps2732-4, PS2733-4 pin connection (top view) ? ctr normalized ctr degradation time, hr 1. anode 2. cathode 3. emitter 4. collecter 1. 3. anode 2. 4. cathode 5. 7. emitter 6. 8. collecter 1, 3, 5, 7. anode 2, 4, 6, 8. cathode 9, 11, 13, 15. emitter 10, 12, 14, 16. collector ps2732-1,-2,-4, ps2733-1,-2,-4 i f = 1 ma 0.8 0.6 0.4 0.2 0 10 10 2 1.2 1.0 10 3 10 4 10 5 10 6 t a = 25 ? c t a = 60 ? c 43 1 2 1 2 4 3 4.5 max 7.0 0.3 4.4 1.3 1.2 max 2.3 max 2.0 2.54 0.1 0.1 0.4 0.15 +0.10 -0.05 0.5 0.3 +0.10 -0.05 9.3 max 85 1 4 8765 1 234 2.3 max 2.0 2.54 1.2 max 4.4 0.5 0.3 1.3 7.0 0.3 0.4 0.1 0.1 0.15 +0.10 -0.05 +0.10 -0.05 16 9 18 19.46 max 2.3 max 2.54 1.2 max 0.1 0.1 0.4 2.0 0.15 +0.10 -0.05 0.5 0.3 1.3 7.0 0.3 4.4 16 15 14 13 134 12 11 10 9 2578 6 +0.10 -0.05 exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ?headquarters ?4590 patrick henry drive ?santa clara, ca 95054-1817 ?(408) 988-3500 ?telex 34-6393 ?fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ?internet: http://www.cel.com 7/26/2000 data subject to change without notice
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